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US Patent Issued to GLOBALFOUNDRIES U.S. on Nov. 3 for "Word line charge pump circuit and memory device including the same" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,825, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.). "Word line charge pump circuit and memory device including t... Read More


US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Nov. 3 for "Method for calculating a MAC operation in a 1SIR-type RRAM memory" (French Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,826, issued on Nov. 3, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "Method for calculating a MAC... Read More


US Patent Issued to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on Nov. 3 for "Device-based cross point array and method of operation thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,827, issued on Nov. 3, was assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Pohang-si, South Korea). "Device-based cross po... Read More


US Patent Issued to TSINGHUA UNIVERSITY on Nov. 3 for "Data processing method based on memristor array, and electronic apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,828, issued on Nov. 3, was assigned to TSINGHUA UNIVERSITY (Beijing). "Data processing method based on memristor array, and electronic appar... Read More


US Patent Issued to The Chinese University of Hong Kong on Nov. 3 for "Method for storing data and optical storage" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,829, issued on Nov. 3, was assigned to The Chinese University of Hong Kong (Hong Kong). "Method for storing data and optical storage" was in... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Non-volatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,830, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Non-volatile memory device" was invented by Ku... Read More


US Patent Issued to TOWER PARTNERS SEMICONDUCTOR, TOWER SEMICONDUCTOR on Nov. 3 for "Semiconductor memory device" (Japanese, Israeli Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,831, issued on Nov. 3, was assigned to TOWER PARTNERS SEMICONDUCTOR Co. LTD. (Uozu City, Japan) and TOWER SEMICONDUCTOR LTD. (Migdal Haemek, ... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory array structures" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,832, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory array structures" was invented by Jae Kyu Choi (Boise,... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory array structures and methods of their fabrication" (American, Italian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,833, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory array structures and methods of their fabrication" was... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory device with segmented SGD drain" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,834, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device with segmented SGD drain" was invented by Darwi... Read More